The impact of nonstationary transport and quantum effects on performances of 0.1 $\mu$m partially depleted silicon-on-insulator (SOI) technology is investigated by 2D simulation on realistic devices. We analyze quantitatively the technology influence on the needed level for carrier transport modeling and we show which recipes must be used to evaluate performance of current devices. The original point is the investigation of technological parameters impact on injection velocity at source side and on drain current. We conclude that specific engineering of access region must be envisaged for taking full advantage of nonstationary effects on device performance.