A numerical MOSFET model (DYNAMOS) is presented. The present approach accounts for quantum effects in the semiconductor substrate by solving the self-consistent one-dimensional Schrodinger and Poisson equations. It also includes a transient model of interface and near-interface oxide traps based on Schockley-Read-Hall statistics. By extension, this model is able to simulate the charging/discharging of an arbitrary trap sheet present in the gate-dielectric system. As a result, the calculation of the source-to-drain current, valid in both weak and strong inversion regimes before saturation, is well-adapted to describe the dynamic behavior (under a gate voltage sweep) of ultra-thin gate oxide MOSFETs, oxide/nitride and double-layer high-k dielectric based devices. (C) 2002 Elsevier Science Ltd. All rights reserved.