Highly Performant Double Gate MOSFET realized with SON process
Résumé
Utilizing the SON (Silicon On Nothing) process, highly performant double gate devices have been processed in a planar configuration. Two families of devices were obtained (High Performance and Low Power) with very-high Ion/Ioff trade off. Drive currents of 1954muA/mum (Ioff = 283 nA/mum) and 1333 muA/mum (Ioff = 1 nA/mum) are obtained @1.2V with Tox = 20A and Lgate = 70nm. DIBL is very well controlled, measured below 60mV for gates as short as 40nm. These features place our devices among the most performant ever reported.