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Article Dans Une Revue Electrochemical and Solid-State Letters Année : 2003

Tunneling component of the ballistic current in ultimate double-gate devices

Résumé

A 2D simulation code resolving the Schrodinger and Poisson equations coupled with the ballistic transport equation in double-gate (DG) devices has been developed. This code has been used to investigate the operation of DG metal-oxide-semiconductor field-effect transistors (MOSFETs) in the decananometer range (5-20 nm) with ultrathin gate oxides and film bodies (1.5 nm). Particular emphasis is on the impact of quantum tunneling on the DG MOSFET scaling in terms of short-channel effects, off-state current, and subthreshold slope. (C) 2003 The Electrochemical Society.
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Dates et versions

hal-01759471 , version 1 (05-04-2018)

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Jean-Luc Autran, Daniela Munteanu. Tunneling component of the ballistic current in ultimate double-gate devices. Electrochemical and Solid-State Letters, 2003, 6 (7), pp.G95-G97. ⟨10.1149/1.1575591⟩. ⟨hal-01759471⟩
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