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Article Dans Une Revue Solid-State Electronics Année : 2003

Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

Résumé

A new 2-D simulation code resolving the Schrodinger and Poisson equations coupled with the ballistic transport equation in double-gate (DG) devices has been developed. The present approach also includes the quantum mechanical tunneling of carriers through the source-to-drain barrier and the wave function penetration in the gate oxide. This code has been used to investigate the operation of DG SOI MOSFETs in the deca-nanometer range (5-20 nm) with ultrathin gate oxide and film bodies (1.5 nm). The present study particularly emphasizes on the impact of quantum tunneling on the DG SOI MOSFET scaling in terms of short-channel effects, off-state current and subthreshold slope. (C) 2003 Elsevier Science Ltd. All rights reserved.

Dates et versions

hal-01759470 , version 1 (05-04-2018)

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Daniela Munteanu, Jean-Luc Autran. Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices. Solid-State Electronics, 2003, 47 (7), pp.1219-1225. ⟨10.1016/S0038-1101(03)00039-X⟩. ⟨hal-01759470⟩
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