Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green's Function Formalism - Archive ouverte HAL
Article Dans Une Revue Journal of Computational Electronics Année : 2004

Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green's Function Formalism

Résumé

A program to numerically simulate point defects in nanowire metal-oxide-semiconductor field-effect transistors is described. The simulation scheme is based on the non-equilibrium Green's function method self-consistently being obtained via the resolution of 3D Poisson's equation. A tight-binding hamiltonian is used and the point defect is characterized by a macroscopic coulombic tail treated in the mode-space approach, plus a short range on-site perturbation potential energy, treated exactly. The effect on internal quantities and on the transistor characteristics is studied as a function of the strength and the location of the defect potential. Subthreshold current is found to vary in a factor 10 according to the position of the impurity.

Dates et versions

hal-01759465 , version 1 (05-04-2018)

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Citer

Marc Bescond, Jean-Luc Autran, Nicolas Cavassilas, Daniela Munteanu, Michel Lannoo. Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green's Function Formalism. Journal of Computational Electronics, 2004, 3 (3-4), pp.393-396. ⟨10.1007/s10825-004-7083-4⟩. ⟨hal-01759465⟩
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