Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates
Résumé
A quantum-mechanical (QM) full analytical model of the threshold voltage (V-T) for long-channel double-gate (DG) MOSFETs has been developed. This approach is based on analytical solutions for the decoupled Schrodinger and Poisson equations solved in the silicon region. Using this original model, a detailed quantitative comparison between symmetric (SDG) and asymmetric (ASG) architectures has been performed in terms of V-T dependence with film thickness and doping level.