Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates - Archive ouverte HAL
Communication Dans Un Congrès Année : 2004

Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates

Résumé

A quantum-mechanical (QM) full analytical model of the threshold voltage (V-T) for long-channel double-gate (DG) MOSFETs has been developed. This approach is based on analytical solutions for the decoupled Schrodinger and Poisson equations solved in the silicon region. Using this original model, a detailed quantitative comparison between symmetric (SDG) and asymmetric (ASG) architectures has been performed in terms of V-T dependence with film thickness and doping level.
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Dates et versions

hal-01759462 , version 1 (05-04-2018)

Identifiants

  • HAL Id : hal-01759462 , version 1

Citer

Jean-Luc Autran, Daniela Munteanu, O Tintori, S Harrison, E Decarre, et al.. Quantum-mechanical analytical Modeling of threshold voltage in long-channel double-gate MOSFET with symmetric and asymmetric gates. NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, Unknown, Unknown Region. pp.163-166. ⟨hal-01759462⟩
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