Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

The sensitivity to heavy ions of a 0.25 mu m fully-depleted SOI n-channel transistor is evaluated by numerical simulation. The variation of the bipolar gain versus LET and particle location in the structure is thoroughly investigated.

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Micro et nanotechnologies/Microélectronique

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https://hal.science/hal-01759457

Soumis le : jeudi 5 avril 2018-14:33:59

Dernière modification le : lundi 10 juin 2024-16:58:03

Dates et versions

hal-01759457 , version 1 (05-04-2018)

Identifiants

HAL Id : hal-01759457 , version 1
DOI : 10.1109/TNS.2005.855810

Citer

K Castellani-Coulie, Daniela Munteanu, V Ferlet-Cavrois, Jean-Luc Autran. Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations. IEEE Transactions on Nuclear Science, 2005, 52 (5, 2), pp.1474-1479. ⟨10.1109/TNS.2005.855810⟩. ⟨hal-01759457⟩

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