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Communication Dans Un Congrès Année : 2005

Quantum short-channel compact modeling of drain-current in double-gate MOSFET

Résumé

A continuous compact model for the drain current, including short-channel effects and carrier quantization in Double-Gate MOSFET is developed. The model is particularly well-adapted to ultra-scaled devices, with short channel lengths and ultra-thin silicon films. An extensive comparison step with 2D quantum numerical results fully validates the model. Finally, the model is shown to reproduce with an excellent accuracy experimental drain current in Double-Gate devices.
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Dates et versions

hal-01759453 , version 1 (05-04-2018)

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Daniela Munteanu, Jean-Luc Autran, X Loussier, S Harrison, R Cerutti, et al.. Quantum short-channel compact modeling of drain-current in double-gate MOSFET. PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, Unknown, Unknown Region. pp.137-140, ⟨10.1109/ESSDER.2005.1546604⟩. ⟨hal-01759453⟩
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