An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Molecular Simulation Année : 2005

An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors

Résumé

The subthreshold characteristic of ultra-thin (i.e. quantum-wire), ultra-short double-gate transistors (symmetric structures) working in the ballistic regime has been analytically modeled. This model takes into account short-channel effects, quantization effects and source-to-drain tunneling (WKB approximation) in the expression of the subthreshold drain current. Important device parameters, such as I off -current or subthreshold swing, can be easily evaluated through this full analytical approach, which also provides a complete set of equations for developing equivalent-circuit model used in ICs simulation.
Fichier non déposé

Dates et versions

hal-01759451 , version 1 (05-04-2018)

Identifiants

Citer

Jean-Luc Autran, Daniela Munteanu, O Tintori, E Decarre, Am Ionescu. An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors. Molecular Simulation, 2005, 31 (2-3), pp.179-183. ⟨10.1080/0892702051233132⟩. ⟨hal-01759451⟩
20 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More