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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2006

Investigation of quantum effects in ultra-thin body single- and double-gate devices submitted to heavy ion irradiation

Résumé

The response to single-event transient of decananometer SOI MOSFETs is investigated by heavy ion experiment and by 3D quantum simulation. The 50 nm FD Single-Gate SOI devices have been irradiated with heavy ions at GANIL (Caen, France) using a new experimental setup. Three-dimensional numerical simulation is used to get further insights and to extrapolate the experimental results when devices are scaled down. For ultra-thin films new phenomena such as quantum-mechanical confinement have to be carefully considered in the device simulation. These effects are found to have an increasing impact on the operation of future ultra-thin single- and double-gate devices submitted to heavy ion irradiation.
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hal-01759448 , version 1 (05-04-2018)

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Daniela Munteanu, V. Ferlet-Cavrois, Jean-Luc Autran, P. Paillet, J. Baggio, et al.. Investigation of quantum effects in ultra-thin body single- and double-gate devices submitted to heavy ion irradiation. IEEE Transactions on Nuclear Science, 2006, 53 (6, 1), pp.3363-3371. ⟨10.1109/TNS.2006.886206⟩. ⟨hal-01759448⟩
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