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Article Dans Une Revue Journal of computational and theoretical nanoscience Année : 2008

Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach

Résumé

The electronic transport in independent Double-Gate nanotransistors is theoretically investigated using a self-consistent Poisson-Schrodinger solver based on a two-dimensional (real-space) Non-Equilibrium Green's Function (NEGF) approach and parallelized code architecture. Physical insights concerning the three- and four-terminal operations of these independent-gate devices are provided for long-term technology nodes (5-10 nm channel lengths) and pure ballistic operation.
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Dates et versions

hal-01759436 , version 1 (05-04-2018)

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  • HAL Id : hal-01759436 , version 1

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Jean-Luc Autran, Daniela Munteanu. Simulation of electron transport in nanoscale independent-gate Double-Gate devices using a full 2D Green's function approach. Journal of computational and theoretical nanoscience, 2008, 5 (6), pp.1120-1127. ⟨hal-01759436⟩
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