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Communication Dans Un Congrès Année : 2015

Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes

Résumé

The SOI structural characterization is addressed in this paper by using split capacitance measurements on p-i-n gated diodes. The p+ and n+ contacts supply promptly electrons and holes in the body, preventing the diode from the parasitic transient effects that undermine the capacitance measurements in SOI MOSFETs. A novel method to determine the silicon film thickness, based on the capacitance derivative, is presented and validated by experiments and TCAD simulations.
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Dates et versions

hal-01758618 , version 1 (04-04-2018)

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C. Navarro, M. Bawedin, F. Andrieu, J. Cluzel, Y. Solaro, et al.. Thickness characterization by capacitance derivative in FDSOI p-i-n gated diodes. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, France. ⟨10.1109/ULIS.2015.7063745⟩. ⟨hal-01758618⟩
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