Article Dans Une Revue Journal of Crystal Growth Année : 2001

MBE growth of InAs/InAsSb/InAlAsSb “W” quantum well laser diodes emitting near 3μm

Résumé

We report the molecular beam epitaxy growth of a new laser structure on n-type (1 0 0) InAs substrate, which was designed for emission near 3 μm at 80 K and 3.3 μm at room temperature. This structure employs the InAsSb/InAs/InAsSb/InAlAsSb type-II “W” configuration in the active region, broad InAlAsSb waveguides, and AlAsSb cladding layers. Lattice-matching of In0.88Al0.12As1−xSbx quaternary alloy was obtained at a low temperature (420°C) by controlling the Sb2/(Sb2+As2) BEP ratio using high V/III flux ratios, while the growth of AlAs0.16Sb0.84 was performed at higher temperatures (480°C and 525°C) using a quasi stoichiometric growth method, based on the control of Al, As and Sb incorporation rates with a V/III ratio close to one. Laser diodes fabricated from these structures showed laser emission near 2.95 μm at 80 K with a threshold current density of 150 A/cm2. The devices operated in pulsed mode up to 155 K. Ridge lasers exhibited continuous wave operation at 80 K with an optical power efficiency of 62.5 mW/A/facet.

Dates et versions

hal-01756480 , version 1 (02-04-2018)

Identifiants

Citer

A. Wilk, B. Fraisse, Philippe Christol, G. Boissier, P. Grech, et al.. MBE growth of InAs/InAsSb/InAlAsSb “W” quantum well laser diodes emitting near 3μm. Journal of Crystal Growth, 2001, 227-228, pp.586 - 590. ⟨10.1016/S0022-0248(01)00777-1⟩. ⟨hal-01756480⟩
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