Microstructure and local electrical behavior in [(Nd<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>)<sub>4</sub> / (SrTiO<sub>3</sub>)<sub>n</sub> ]<sub>10</sub> ( n = 4–8) superlattices - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue RSC Advances Année : 2018

Microstructure and local electrical behavior in [(Nd2Ti2O7)4 / (SrTiO3)n ]10 ( n = 4–8) superlattices

Résumé

Artificial [(Nd2Ti2O7)4/(SrTiO3)n]10 superlattices (n = 4 and 8) were successfully epitaxially grown on SrTiO3 substrates by pulsed laser deposition using the in situ high energy electron diffraction reflection diagnostic. The crystallographic relationships between Nd2Ti2O7 (NTO) and SrTiO3 (STO) (layers and substrate) were: [100]NTO//[001]STO, [010]NTO//[[1 with combining macron]10]STO, and (00l)NTO//(110)STO. Nanoscale current variation was detected on both superlattices, with the (NTO4/STO4)10 heterostructure showing a higher density. The (NTO4/STO4)10 sample did not show a piezoelectric response when measured by piezo-force microscopy (PFM), while ambiguous piezoactivity was observed on the (NTO4/STO8)10 superlattice. Scanning transmission electron microscopy energy dispersive spectroscopy analysis showed the diffusion of Nd3+ cations on Sr2+ sites in SrTiO3 structure into the multilayers, which was more pronounced when the value of n was lower. These particular nanoscale electrical behaviors, evidenced by electrical conducting channels and misleading PFM signals, were mainly attributed to the presence of oxygen vacancies in the SrTiO3 layers at higher concentrations near the interface and to the mixed valence state of the titanium (Ti3+/Ti4+). This work showed the strong influence of interface structure on nanoscale electrical phenomena in complex oxide superlattices.

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Chimie Matériaux
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hal-01741606 , version 1 (13-11-2023)

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Thomas Carlier, Anthony Ferri, Sébastien Saitzek, Marielle Huvé, Alexandre Bayart, et al.. Microstructure and local electrical behavior in [(Nd2Ti2O7)4 / (SrTiO3)n ]10 ( n = 4–8) superlattices. RSC Advances, 2018, 8 (21), pp.11262 - 11271. ⟨10.1039/C8RA00824H⟩. ⟨hal-01741606⟩
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