Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001) - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2016

Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

Abstract

Structural and morphological characterization of a Si(110) film heteroepitaxied on 3C-SiC(001)/Si(001) on-axis template by chemical vapor deposition has been performed. An antiphase domain (APD) free 3C-SiC layer was used showing a roughness limited to 1 nm. This leads to a smooth Si film with a roughness of only 3 nm for a film thickness of 400 nm. The number of rotation domains in the Si(110) epilayer was found to be two on this APD-free 3C-SiC surface. This is attributed to the in-plane azimuthal misalignment of the mirror planes between the two involved materials. We prove that fundamentally no further reduction of the number of domains can be expected for the given substrate. We suggest the necessity to use off-axis substrates to eventually favor a single domain growth.

Dates and versions

hal-01741073 , version 1 (22-03-2018)

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Rami Khazaka, Marius Grundmann, Marc Portail, Philippe Vennegues, Marcin Zielinski, et al.. Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001). Applied Physics Letters, 2016, 108 (1), ⟨10.1063/1.4939692⟩. ⟨hal-01741073⟩
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