Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots
Résumé
Hole and electron traps at a p–n heterostructure with InGaAs/GaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) are investigated by capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS). The C–V and DLTS measurements allowed to detect that the region of the accumulation of the electron concentration is characterized by the presence of hole and electron traps. We have observed by means of deep level defects, the population of the energy states of InGaAs quantum dots as a function of temperature of isochronous annealing as well as under bias-on–bias-off cooling conditions and white light illumination.