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Article Dans Une Revue Proceedings - Electrochemical Society Année : 2004

High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes

C. Aulnette
  • Fonction : Auteur
N. Daval
  • Fonction : Auteur
O. Rayssac
  • Fonction : Auteur
B. Ghyselen
  • Fonction : Auteur

Résumé

SiGe virtual substrates grown by RP-CVD onto Si(001) substrates are characterized by a macroscopic degree of strain relaxation R = 97.2 ± 1.2%, threading dislocations densities as low as 4×105 cm -2 and rather smooth surfaces (rms roughness: 2 - 5 nm). Such virtual substrates have been used as templates for the formation of SiGe-On-Insulator structures (on which we have studied the specifics of Si and SiGe re-epitaxy). We have also grown Ge thick layers directly onto Si(001). Tensile-strained (R = 107%), smooth (rms ∼ 1 nm) Ge layers with a low threading dislocation density (6×106 cm-2) are obtained that are characterized by high absorption coefficients: A = 10000 cm-1 @ 1.3μm and 4500 cm-1 @ 1.55μm. Finally, we have obtained dense, narrowly size-distributed Ge islands that, when integrated into {Ge quantum dots / Si spacer} stacks, emit light at 1520 nm (PL @ 10K) and are characterized by A ∼ 70 cm-1 in-between 1.2 and 1.7 μm.
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Dates et versions

hal-01736107 , version 1 (16-03-2018)

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  • HAL Id : hal-01736107 , version 1

Citer

Y. Bogumilowicz, J.M. Hartmann, J.F. Damlencourt, B. Vandelle, A. Abbadie, et al.. High Ge content Si / SiGe heterostructures for microelectronics and optoelectronics purposes. Proceedings - Electrochemical Society, 2004, 7, pp.665-679. ⟨hal-01736107⟩
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