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Article Dans Une Revue Nanoscale Research Letters Année : 2014

Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing

Chantal Fontaine

Résumé

We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.
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Dates et versions

hal-01723509 , version 1 (04-02-2019)

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Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, Julien Nicolaï, Alexandre Arnoult, et al.. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing. Nanoscale Research Letters, 2014, 9 (1), pp.123. ⟨10.1186/1556-276X-9-123⟩. ⟨hal-01723509⟩
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