Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
Résumé
III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.