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Article Dans Une Revue Semiconductors Année : 2014

Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

Résumé

III-N blue LED structures with active regions based on InGaN nanoislands are studied. The structures are grown by metalorganic vapor-phase epitaxy (MOVPE) on GaN layers deposited by various methods for the initial formation of an epitaxial layer. It is shown that, due to strong carrier localization in narrow-gap InGaN nanoislands, the electroluminescence efficiency is independent of the crystal perfection of the material.
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hal-01721154 , version 1 (01-03-2018)

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Wsevolod V. Lundin, Andrey E. Nikolaev, A.V. Sakharov, S.O. Usov, E.E. Zavarin, et al.. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers. Semiconductors, 2014, 48 (1), pp.53-57. ⟨10.1134/S1063782614010199⟩. ⟨hal-01721154⟩
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