GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017

GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy

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hal-01715971 , version 1 (23-02-2018)

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  • HAL Id : hal-01715971 , version 1

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Simon Charbonnier, Ida Lucci, Subhashis Gangopadhyay, Yanping Wang, Tony Rohel, et al.. GaP/Si(001) polar-on-nonpolar epitaxial growth revisited by scanning tunneling microscopy . 16th International Conference on the Formation of Semiconductor Interfaces (ICFSI-16), Jul 2017, Hannover, Germany. ⟨hal-01715971⟩
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