Recently, Oxide-based random access memory devices (OxRAM) have shown the potential to outperform nonvolatile memories due to their high scalability, high-speed, highdensity, and low-energy operation. A critical requirement for using OxRAM at circuit level is a predictive model for device behavior that can be used in simulations, as well as a guide for circuit designers. The proper choice of the memory device model leads to a better understanding of the memory cell behavior, and also to a better exploitation of its unique properties in novel systems. This work is intended to help designers decide on the most appropriate memory cell model for circuit design. We present a comparative study of the different major existing OxRAM models tested within the same simulation environment.