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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2017

On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study

Résumé

We address accurate computation of on-orbit upset rates in advanced technologies, with a focus on FD-SOI at the 28 nm node. Heavy-ion measurements performed on FD-SOI SRAM bit-cells give experimental evidence of the technology's intrinsic robustness in space environments; this extreme reduction of sensitive volume dimensions deeply affects the assumptions pertaining to the radiation response models used to predict upset rates. The generic ``Integral Rectangular Parallele Piped''(IRPP) model, although requiring careful setting of its parameters, provides us with first-order estimates of the error rate. We then present a custom FD-SOI response model within our Monte-Carlo simulation chain, enabling comparison with IRPP and further analyses.
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Dates et versions

hal-01694468 , version 1 (08-05-2018)

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Victor Malherbe, Gilles Gasiot, Dimitri Soussan, Jean-Luc Autran, Philippe Roche. On-Orbit Upset Rate Prediction at Advanced Technology Nodes: a 28 nm FD-SOI Case Study. IEEE Transactions on Nuclear Science, 2017, 64 (1, 1), pp.449-456. ⟨10.1109/TNS.2016.2634604⟩. ⟨hal-01694468⟩
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