A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector - Archive ouverte HAL
Article Dans Une Revue IEEE Transactions on Circuits and Systems I: Regular Papers Année : 2017

A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector

Résumé

This paper presents a high-rate IR-UWB transceiver chipset implemented in a 130-nm CMOS technology for WBAN and biomedical applications in the 3.1-4.9 GHz band. The transmitter is based on a pulse synthesizer and an analytical up-converted Gaussian pulse is used to predict its settings. Its measured peak-to-peak output voltage is equal to 0.9 Vpp on a 100 Omega load for a central frequency of 4 GHz, and a supply voltage of 1.2 V, which gives an emitted energy per pulse of 0.64 pJ. The receiver is a non-coherent architecture based on an LNA followed by a peak-voltage detector. A BER of 10(-3) is measured for a 3.1-4.9 GHz input peak-to-peak pulse amplitude of 1.1 mV, which corresponds to a sensitivity of -85.8 dBm at 1 Mb/s and gives a communication range estimated to 1.9 m.
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Dates et versions

hal-01694218 , version 1 (18-05-2018)

Identifiants

Citer

Remy Vauche, Eloi Muhr, Olivier Fourquin, Sylvain Bourdel, Jean Gaubert, et al.. A 100 MHz PRF IR-UWB CMOS Transceiver With Pulse Shaping Capabilities and Peak Voltage Detector. IEEE Transactions on Circuits and Systems I: Regular Papers, 2017, 64 (6), pp.1612-1625. ⟨10.1109/TCSI.2017.2669902⟩. ⟨hal-01694218⟩
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