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Article Dans Une Revue Microelectronics Reliability Année : 2017

Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

Résumé

Altitude and underground real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. Applied for both neutron-induced and alpha particle-induced SERB, this detailed analysis highlights the respective contributions of atmospheric radiation and alpha contamination to multiple cell upset mechanisms. It also offers a simple way to predict by simulation the radiation response of a given technology for any terrestrial position, as illustrated here for bulk 65 nm and 40 nm SRAMs. (C) 2017 Elsevier Ltd. All rights reserved.
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hal-01693984 , version 1 (08-05-2018)

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Soilihi Moindjie, Jean-Luc Autran, Daniela Munteanu, Gilles Gasiot, Philippe Roche. Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs. Microelectronics Reliability, 2017, 76 (SI), pp.53-57. ⟨10.1016/j.microrel.2017.07.045⟩. ⟨hal-01693984⟩
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