Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Japanese Journal of Applied Physics Année : 2017

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Résumé

Deep traps in AlGaN/GaN Schottky barrier diodes have been investigated using deep level transient spectroscopy. It has been found that ion-assisted gate recess process leads to the formation of electron traps. The defects related to these traps are mainly located in the two-dimensional electron gas channel below the Schottky contact, meaning that the partial etching of the AlGaN layer produces damage on the top of the underlying GaN layer. The activation energies of the electron traps, extracted from the data, range between 0.28 and 0.41 eV. We believe that these centers are complexes linked with nitrogen vacancies which may behave as extended defects.
Fichier principal
Vignette du fichier
Ferrandis JJAP 2017.pdf (355.35 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-01692619 , version 1 (26-01-2018)

Identifiants

Citer

Philippe Ferrandis, Matthew Charles, Yannick Baines, Julien Buckley, Gennie Garnier, et al.. Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy. Japanese Journal of Applied Physics, 2017, 56 (4S), pp.04CG01. ⟨10.7567/JJAP.56.04CG01⟩. ⟨hal-01692619⟩
547 Consultations
112 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More