Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Semiconductor Science and Technology Année : 2017

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

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hal-01677499 , version 1 (08-01-2018)

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Caroline B. Lim, Akhil Ajay, Jonas Lähnemann, Catherine Bougerol, Eva Monroy. Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures. Semiconductor Science and Technology, 2017, 32 (12), pp.125002. ⟨10.1088/1361-6641/aa919c⟩. ⟨hal-01677499⟩
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