A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications
Résumé
A fully integrated WirelessHD compatible 60-GHz transceiver module in 65-nm CMOS process is presented, covering the four standard channels. The silicon die is flip-chipped on top of a low-cost HTCC module which also includes an external 65-nm CMOS PA and large beamwidth antennas targeting industrial manufacturability. The module achieves a 16QAM OFDM modulation wireless link with 3.8 Gbps over 1 m. The transceiver consumption is 454 mW in RX mode (including PLL) and 1090 mW in TX mode (including PLL and external PA).
Mots clés
CMOS analogue integrated circuits
OFDM modulation
elemental semiconductors
field effect MIMIC
millimetre wave antennas
millimetre wave power amplifiers
quadrature amplitude modulation
radio links
radio transceivers
silicon
16QAM OFDM modulation wireless link
CMOS PA
CMOS fully integrated transceiver module
RX mode
Si
TX mode
beamwidth antennas
bit rate 3.8 Gbit/s
distance 1 m
frequency 60 GHz
fully integrated wireless HD compatible transceiver module
low-cost HTCC module
power 1090 mW
power 454 mW
power amplifier
silicon die
size 65 nm
CMOS integrated circuits
Computer architecture
Frequency synthesizers
Low-noise amplifiers
OFDM
Power amplifiers
Transceivers
60 GHz
Analog baseband
CMOS
Gm-C continuous-time filter
high-temperature cofired ceramic (HTCC) module
low-noise amplifier (LNA)
millimeter-wave (mmW) design
wireless HD