Article Dans Une Revue Solid-State Electronics Année : 2011

Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise

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hal-01653011 , version 1 (30-11-2017)

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M. Valenza, J. Gyani, F. Martinez, S. Soliverès, C. Le Royer, et al.. Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise. Solid-State Electronics, 2011, 59 (1), pp.34 - 38. ⟨10.1016/j.sse.2011.01.015⟩. ⟨hal-01653011⟩
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