A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2011

A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation

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Electronique

Dates et versions

hal-01653010 , version 1 (30-11-2017)

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F. Lime, R. Ritzenthaler, M. Ricoma, F. Martinez, F. Pascal, et al.. A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation. Solid-State Electronics, 2011, 57 (1), pp.61 - 66. ⟨10.1016/j.sse.2010.11.034⟩. ⟨hal-01653010⟩
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