Conference Papers
Year : 2005
Bertrand BOUDART : Connect in order to contact the contributor
https://hal.science/hal-01651276
Submitted on : Tuesday, November 28, 2017-7:18:07 PM
Last modification on : Wednesday, March 9, 2022-2:14:03 PM
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- HAL Id : hal-01651276 , version 1
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C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, Bertrand Boudart. Bipolar transistors under positive and negative gate bias stresses. IEEE International Symposium on Industrial Electronics (ISIE05), 2005, Dubrovnik, Croatia. ⟨hal-01651276⟩
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