Bipolar transistors under positive and negative gate bias stresses - Archive ouverte HAL
Conference Papers Year : 2005
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hal-01651276 , version 1 (28-11-2017)

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  • HAL Id : hal-01651276 , version 1

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C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, Bertrand Boudart. Bipolar transistors under positive and negative gate bias stresses. IEEE International Symposium on Industrial Electronics (ISIE05), 2005, Dubrovnik, Croatia. ⟨hal-01651276⟩
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