Bipolar transistors under positive and negative gate bias stresses - Archive ouverte HAL
Conference Papers Year : 2005

Bipolar transistors under positive and negative gate bias stresses

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Engineering Sciences [physics] Electronics

Bertrand BOUDART  : Connect in order to contact the contributor

https://hal.science/hal-01651276

Submitted on : Tuesday, November 28, 2017-7:18:07 PM

Last modification on : Wednesday, March 9, 2022-2:14:03 PM

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hal-01651276 , version 1 (28-11-2017)

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  • HAL Id : hal-01651276 , version 1

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C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, Bertrand Boudart. Bipolar transistors under positive and negative gate bias stresses. IEEE International Symposium on Industrial Electronics (ISIE05), 2005, Dubrovnik, Croatia. ⟨hal-01651276⟩

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