Examination of punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses - Archive ouverte HAL Access content directly
Conference Papers Year : 2005

Examination of punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses

No file

Dates and versions

hal-01651274 , version 1 (28-11-2017)

Identifiers

  • HAL Id : hal-01651274 , version 1

Cite

C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, B. Boudart. Examination of punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses. PCIM Europe 2005, 2005, Nuremberg, Germany. ⟨hal-01651274⟩
58 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More