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Communication Dans Un Congrès Année : 2005

Examination of punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses

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hal-01651274 , version 1 (28-11-2017)

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  • HAL Id : hal-01651274 , version 1

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C.O. Maïga, Boubekeur Tala-Ighil, H. Toutah, B. Boudart. Examination of punch-through insulated gate bipolar transistors under high temperature gate bias and high temperature reverse bias stresses. PCIM Europe 2005, 2005, Nuremberg, Germany. ⟨hal-01651274⟩
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