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Article Dans Une Revue Microelectronics Reliability Année : 2004

Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress

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hal-01647697 , version 1 (24-11-2017)

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C.O. Maïga, H. Toutah, Boubekeur Tala-Ighil, B. Boudart. Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress. Microelectronics Reliability, 2004, 44 (9-11), pp.1461 - 1465. ⟨10.1016/j.microrel.2004.07.040⟩. ⟨hal-01647697⟩
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