Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress - Archive ouverte HAL Access content directly
Journal Articles Microelectronics Reliability Year : 2004

Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress

C.O. Maïga
  • Function : Author
Laboratoire Universitaire des Sciences Appliquées de Cherbourg
H. Toutah
  • Function : Author
Boubekeur Tala-Ighil
  • Function : Author
B. Boudart
Laboratoire Universitaire des Sciences Appliquées de Cherbourg

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Engineering Sciences [physics] Electronics

Bertrand BOUDART  : Connect in order to contact the contributor

https://hal.science/hal-01647697

Submitted on : Friday, November 24, 2017-3:01:28 PM

Last modification on : Wednesday, August 2, 2023-4:40:25 PM

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hal-01647697 , version 1 (24-11-2017)

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C.O. Maïga, H. Toutah, Boubekeur Tala-Ighil, B. Boudart. Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress. Microelectronics Reliability, 2004, 44 (9-11), pp.1461 - 1465. ⟨10.1016/j.microrel.2004.07.040⟩. ⟨hal-01647697⟩

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