In situ Raman characterization of CeO2 thin films sputtered on (111) Si in order to optimize the post growth annealing parameters - Archive ouverte HAL
Journal Articles Microelectronic Engineering Year : 2014

In situ Raman characterization of CeO2 thin films sputtered on (111) Si in order to optimize the post growth annealing parameters

Domains

Engineering Sciences [physics] Materials

Bertrand BOUDART  : Connect in order to contact the contributor

https://hal.science/hal-01646880

Submitted on : Thursday, November 23, 2017-7:58:18 PM

Last modification on : Wednesday, March 9, 2022-2:14:03 PM

No file

Dates and versions

hal-01646880 , version 1 (23-11-2017)

Identifiers

Cite

Y. Guhel, J. Bernard, B. Boudart. In situ Raman characterization of CeO2 thin films sputtered on (111) Si in order to optimize the post growth annealing parameters. Microelectronic Engineering, 2014, 118, pp.29 - 34. ⟨10.1016/j.mee.2014.01.014⟩. ⟨hal-01646880⟩

Export

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

COMUE-NORMANDIE UNICAEN LUSAC
33 View
0 Download

Altmetric

Share

More