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Article Dans Une Revue Microelectronic Engineering Année : 2014

In situ Raman characterization of CeO2 thin films sputtered on (111) Si in order to optimize the post growth annealing parameters

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hal-01646880 , version 1 (23-11-2017)

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Y. Guhel, J. Bernard, B. Boudart. In situ Raman characterization of CeO2 thin films sputtered on (111) Si in order to optimize the post growth annealing parameters. Microelectronic Engineering, 2014, 118, pp.29 - 34. ⟨10.1016/j.mee.2014.01.014⟩. ⟨hal-01646880⟩
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