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Article Dans Une Revue Journal of Raman Spectroscopy Année : 2002

Raman characterization of Ar+ ion-implanted GaN

Résumé

Ar+ ions were implanted at room temperature in n-type hexagonal GaN for device isolation purpose. We performed electrical measurements and resonance Raman spectroscopy in order to monitor the electrical and structural changes of non-annealed and annealed implanted GaN samples. On increasing the implantation dose from 3.4 × 1012 to 3.4 × 1014 ions cm−2, an increase in the electrical isolation and a decrease in the photoluminescence were observed. For a 1016 ions cm−2 dose, the implanted layer became conductive owing to a hopping mechanism and only the first-order phonon lines remained observable. After annealing at 900 °C for 30 s, the implanted samples became conductive and the photoluminescence reappeared or increased compared with the non-annealed samples at same implantation doses, except for the sample implanted at the highest dose, which became insulating.

Dates et versions

hal-01646862 , version 1 (23-11-2017)

Identifiants

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B. Boudart, Y. Guhel, J. C. Pesant, P. Dhamelincourt, M. A. Poisson. Raman characterization of Ar+ ion-implanted GaN. Journal of Raman Spectroscopy, 2002, 33 (4), pp.283 - 286. ⟨10.1002/jrs.856⟩. ⟨hal-01646862⟩
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