Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 1999
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hal-01646787 , version 1 (23-11-2017)

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B. Boudart, Christophe Gaquière, S. Trassaert, M. Constant, A. Lorriaux, et al.. Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n+ Ga0.47In0.53As layers for InP high electron mobility transistor applications. Applied Physics Letters, 1999, 74 (21), pp.3221 - 3223. ⟨10.1063/1.124111⟩. ⟨hal-01646787⟩
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