First steps of SiC integrated electronic functions for a smart power driver dedicated to harsh environments
Résumé
The limits of the current electronic solutions restrict the use in harsh environments especially in high temperature (>300 °C). SiC is a material, which allows exceeding these physical constraints. AMPERE laboratory have developed SiC integrated circuits based on lateral MESFETs. This paper presents the first steps of the development of smart integrated driver circuit dedicated to harsh environments.