Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy - Archive ouverte HAL
Article Dans Une Revue Physical Review B Année : 2017

Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy

Résumé

We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides new insights in the quantum Hall effect of topological insulator (TI) slabs, in the cross-over regime between two- and three-dimensional TIs, and in the relevance of thin TI films to explore novel circuit functionalities in spintronics and quantum nanoelectronics.
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Dates et versions

hal-01637000 , version 1 (06-05-2022)

Identifiants

Citer

C. Thomas, O. Crauste, B. Haas, Pierre-Henri Jouneau, Christopher Bäuerle, et al.. Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy. Physical Review B, 2017, 96 (24), pp.245420. ⟨10.1103/PhysRevB.96.245420⟩. ⟨hal-01637000⟩
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