Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2017

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

Christelle Brimont
Thierry Guillet
Bruno Gayral

Abstract

III-nitride-on-silicon L3 and H2 photonic crystal cavities with resonances down to 315 nm and quality factors up to 1085 at 337 nm have been demonstrated. The reduction of quality factor (Q) with decreasing wavelength is investigated. Besides the QW absorption below 340 nm a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 250 at 300 nm when no active layer is present.
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Dates and versions

hal-01631144 , version 1 (08-04-2019)

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Farsane Tabataba-Vakili, Iannis Roland, Thi-Mo Tran, Xavier Checoury, Moustafa El Kurdi, et al.. Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities. Applied Physics Letters, 2017, 111 (13), pp.131103. ⟨10.1063/1.4997124⟩. ⟨hal-01631144⟩
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