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Article Dans Une Revue Applied Physics Letters Année : 2015

Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands

Résumé

Compositional atomic ordering is a crucial issue in the epitaxial growth of nanoparticles and thin films. Here, we report on a method based on x-ray diffuse scattering close to basis forbidden Bragg reflections to infer the lateral location, the symmetry, and the thermal stability of ordered domains in GeSi dome-shaped islands on Si(001) after growth and during annealing. We observe that atomic ordering does not disappear after annealing, demonstrating that it is a resilient metastable phenomenon. (C) 2015 AIP Publishing LLC.
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Dates et versions

hal-01616545 , version 1 (13-10-2017)

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Marie-Ingrid Richard, A. Malachias, Tobias U. Schuelli, Vincent Favre-Nicolin, Z. Zhong, et al.. Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands. Applied Physics Letters, 2015, 106 (1), pp.012108. ⟨10.1063/1.4905844⟩. ⟨hal-01616545⟩
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