Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer - Archive ouverte HAL
Article Dans Une Revue Physical Review Letters Année : 2018

Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer

Résumé

We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states.

Dates et versions

hal-01614284 , version 1 (10-10-2017)

Identifiants

Citer

P. Noel, C. Thomas, Y. Fu, L. Vila, B. Haas, et al.. Highly Efficient Spin-to-Charge Current Conversion in Strained HgTe Surface States Protected by a HgCdTe Layer. Physical Review Letters, 2018, 120 (16), pp.167201. ⟨10.1103/PhysRevLett.120.167201⟩. ⟨hal-01614284⟩
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