Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Physical Chemistry C Année : 2010

Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy

Fichier non déposé

Dates et versions

hal-01597203 , version 1 (28-09-2017)

Identifiants

Citer

Caroline Celle, Céline Mouchet, Emmanuelle Rouvière, Jean-Pierre Simonato, Denis Mariolle, et al.. Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy. Journal of Physical Chemistry C, 2010, 114 (2), pp.760 - 765. ⟨10.1021/jp9094326⟩. ⟨hal-01597203⟩
84 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More