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Journal Articles Applied Physics Letters Year : 2015

Silicon superconducting quantum interference device

Abstract

We have studied a Superconducting Quantum Interference Device (SQUID) made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the gas immersion laser doping technique. The SQUID is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations. (C) 2015 AIP Publishing LLC.

Dates and versions

hal-01590246 , version 1 (19-09-2017)

Identifiers

Cite

Jean-Eudes Duvauchelle, Anais Francheteau, C. Marcenat, Francesca Chiodi, D. Débarre, et al.. Silicon superconducting quantum interference device. Applied Physics Letters, 2015, 107 (7), pp.072601. ⟨10.1063/1.4928660⟩. ⟨hal-01590246⟩
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