Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applications
Résumé
— New Si processes based on Metal Assisted Chemical Etching (MACE) are explored for solar cells texturization. Pt and Au are considered as catalysts for MACE of p and n-type Si substrates. 2D band bending modeling at the nanoscale shows that Pt nanoparticles (NPs) make ohmic contacts and induce delocalized etching. Accordingly, cone-shaped macropores, very efficient in reducing the reflectivity (<5%) are obtained experimentally. On the contrary, Au with n-type Si leads to non-ohmic contacts and localized etching. On this basis, a novel strategy for 3D pattern transfer into Si with patterned nanoporous gold electrodes in a single step is developed.
Mots clés
localized etching
3D pattern transfer
patterned nanoporous gold electrodes
Si
Au
Pt
scanning capacitance spectroscopy
CIGS
CZTS
electrical junction
silicon surface texturization
Pt nanoparticles
metal assisted chemical etching
photovoltaic applications
solar cells texturization
n-type Si substrates
catalysts
p-type Si substrates
2D band bending modeling
ohmic contacts
cone-shaped macropores
reflectivity
nonohmic contacts
delocalized etching
MACE
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