Spin Transfer Nano-Oscillators (STNOs) are promising candidates for telecommunications applications due to their frequency tuning capabilities via either a dc current or an applied field. This frequency tuning is of interest for Frequency Shift Keying concepts to be used in wireless communication schemes or in read head applications. For these technological applications, one important parameter is the characterization of the maximum achievable rate at which an STNO can respond to a modulating signal, such as current or field. Previous studies of in-plane magnetized STNOs on frequency modulation via an rf current revealed that the maximum achievable rate is limited by the amplitude relaxation rate Cp, which gives the time scale over which amplitude fluctuations are damped out. This might be a limitation for applications. Here, we demonstrate via numerical simulation that application of an additional rf field is an alternative way for modulation of the in-plane magnetized STNO configuration, which has the advantage that frequency modulation is not limited by the amplitude relaxation rate, so that higher modulation rates above GHz are achievable. This occurs when the modulating rf field is oriented along the easy axis (longitudinal rf field). Tilting the direction of the modulating rf field in-plane and perpendicularly with respect to the easy axis (transverse rf field), the modulation is again limited by the amplitude relaxation rate similar to the response observed in current modulation.