Modeling anisotropic magnetoresistance in layered antiferromagnets - Archive ouverte HAL
Article Dans Une Revue Journal of Physics: Condensed Matter Année : 2017

Modeling anisotropic magnetoresistance in layered antiferromagnets

Résumé

We have investigated the electronic transport and the anisotropic magnetoresistance in systems consisting of pairs of antiferromagnetically aligned layers separated by a non-magnetic layer, across which an antiferromagnetic coupling between the double layers is established. Calculations have been performed within the framework of the tight-binding model, taking into account the exchange coupling within the ferromagnetic layers and the Rashba spin–orbit interaction. Conductivities have been evaluated in the ballistic regime, based on Kubo formula. We have systematically studied the dependence of the conductivity and of the anisotropic magnetoresistance on several material and structural parameters, such as the orientation of the magnetic moments relative to the crystalline axis, band filling, out-of-plane hopping and spin–orbit parameter.
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Dates et versions

hal-01576749 , version 1 (23-08-2017)

Identifiants

Citer

D L R Santos, F A Pinheiro, J Velev, Mairbek Chshiev, J D’albuquerque E Castro, et al.. Modeling anisotropic magnetoresistance in layered antiferromagnets. Journal of Physics: Condensed Matter, 2017, 29 (23), pp.235302. ⟨10.1088/1361-648X/aa6b2b⟩. ⟨hal-01576749⟩
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