Two compact frequency generation topologies based on distributed oscillator architecture have been for the very first time integrated at 134GHz and 202GHz in a 10ML 28nm FDSOI CMOS technology. The efficient fundamental frequency generation enables output powers of 0.4dBm and 0.3dBm and 5.5% and 5.4% DC-to-RF efficiency respectively. The body tie of the 28nm FDSOI technology allows phase noise fine tuning through body-bias control. The measured optimum phase noises are -99.6dBc/Hz and -100.4dBc/Hz at 1MHz offset, for the two different oscillators. Robust design has been as well demonstrated, opening the way to mmW and sub-mmW SoC integration in deep submicron FDSOI CMOS.