MD simulations of GaN sputtering by Ar<SUP>+</SUP> ions : Ion-induced damage and near-surface modification under continuous bombardment - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Vacuum Science & Technology A Année : 2010

MD simulations of GaN sputtering by Ar+ ions : Ion-induced damage and near-surface modification under continuous bombardment

Emilie Despiau-Pujo
Pascal Chabert

Résumé

Results from molecular dynamics simulations of continuous 50–200 eV Ar bombardment on wurtzite and zinc blende GaN surfaces are reported. A new analytical bond-order potential, originally developed for growth process studies, is used to investigate the low-energy physical sputtering of GaN compounds. Preferential sputtering of N atoms is initially observed up to 3.5×1015 ions/cm2 fluence, after which the layers reach steady state sputtering. The crystalline structure of the GaN sample does not have a major influence on the sputtering yield due to the rapid amorphization of the top surface after a few hundred impacts. Concentration depth profiles indicate a surface enrichment in gallium with a N/Ga concentration ratio equal to 0.59±0.1 for 100 eV bombardment, in agreement with published experimental studies. For the same conditions, Ga, N, and GaN species represent 25, 60, and 7% of the sputtered products. A significant fraction of those products leave the surface with kinetic energies sufficiently high to damage the passivation layers on sidewalls during etching processes dominated by physical bombardment.
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Dates et versions

hal-01549488 , version 1 (28-06-2017)

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Emilie Despiau-Pujo, Pascal Chabert. MD simulations of GaN sputtering by Ar+ ions : Ion-induced damage and near-surface modification under continuous bombardment. Journal of Vacuum Science & Technology A, 2010, 28 (5), pp.1105. ⟨10.1116/1.3460904⟩. ⟨hal-01549488⟩
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